1995.9-1999.7 北京科技大學(xué)物理系應(yīng)用物理專業(yè)，本科 1999.9-2002.3 北京科技大學(xué)材料物理系材料物理與化學(xué)專業(yè)，碩士，主要從事ULSI銅互連技術(shù)及磁電阻研究

2002.4-2005.6中國(guó)科學(xué)院微電子研究所微電子學(xué)與固體電子學(xué)專業(yè)，博士，主要從事納米加工與納米器件研究。

2005.7至今 中國(guó)科學(xué)院微電子研究所，助理研究員、副研究員，主要從事新型半導(dǎo)體非揮發(fā)性存儲(chǔ)器研究，作為主要成員參與開(kāi)創(chuàng)了三室的重要研究方向納米晶浮柵存儲(chǔ)器和阻變存儲(chǔ)器。

發(fā)表論文20余篇，以第一發(fā)明人申請(qǐng)發(fā)明專利14項(xiàng)，其中已授權(quán)6項(xiàng)。2006年度獲得了微電子所“十佳”先進(jìn)工作者榮譽(yù)。任北京電子學(xué)會(huì)半導(dǎo)體專業(yè)委員會(huì)委員及秘書(shū)、IEEE及IEEE Electron Devices Society會(huì)員。

新型非揮發(fā)存儲(chǔ)器、微納加工技術(shù)、納米電子器件

1. IEEE Member

2. 北京電子學(xué)會(huì)半導(dǎo)體專業(yè)委員會(huì)委員兼秘書(shū)

1.2013年國(guó)家優(yōu)秀青年科學(xué)基金獲得者

2.2014年北京市科學(xué)技術(shù)獎(jiǎng)二等獎(jiǎng)，“阻變存儲(chǔ)器及集成的基礎(chǔ)研究”，排名4/15

3. 2013年國(guó)家技術(shù)發(fā)明獎(jiǎng)二等獎(jiǎng)，“高精度微納結(jié)構(gòu)掩模制造核心技術(shù)”，排名6/6

4.2010年北京市科學(xué)技術(shù)獎(jiǎng)一等獎(jiǎng)，“微納結(jié)構(gòu)“自上而下”制備核心技術(shù)與集成應(yīng)用”，排名5/15

1. 《新型阻變存儲(chǔ)技術(shù)》，科學(xué)出版社，2014年8月出版，編寫(xiě)第6章

2. Shibing Long, Luca Perniola, Carlo Cagli, Julien Buckley, Xiaojuan Lian, Enrique Miranda, Feng Pan, Ming Liu, and Jordi Su?é. Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-Based RRAM

3. Shibing Long, Xiaojuan Lian, Carlo Cagli, Xavier Cartoixà, Riccardo Rurali, Enrique Miranda, David Jiménez, Luca Perniola, Ming Liu and Jordi Su?é. Quantum-size effects in hafnium-oxide resistive switching

4. Shibing Long, Xiaojuan Lian, Tianchun Ye, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Su?é. Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices

5. Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Su?é. A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown

6. Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, and Jordi Su?é. Reset Statistics of NiO-Based Resistive Switching Memories

7. Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, and Jordi Su?é. Analysis and modeling of resistive switching statistics

8. Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, David Jiménez, Hangbing Lv, Qi Liu, Ling Li, Zongliang Huo, Ming Liu, and Jordi Su?é. Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

9. Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, Ming Liu. Resistive Switching Mechanism of Ag/ZrO2:Cu/Pt Memory Cell

10. Guoming Wang, Shibing Long*, Zhaoan Yu, Meiyun Zhang, Tianchun Ye, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Jordi Su?é, and Ming Liu. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

11. Meiyun Zhang, Shibing Long*, Guoming Wang, Xiaoxin Xu, Yang Li, Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Su?é, and Ming Liu. Set statistics in CBRAM device with Cu/HfO2/Pt structure

12. Guoming Wang, Shibing Long*, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, and Ming Liu. Impact of program/erase operation on the performances of oxide-based resistive switching memory

13. Meiyun Zhang, Shibing Long*, Guoming Wang, Ruoyu Liu, Xiaoxin Xu, Yang Li, Dinlin Xu, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Su?é, and Ming Liu. Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

14. Xiaoyi Yang, Shibing Long*, Kangwei Zhang, Xiaoyu Liu, Xiaojuan Lian, Qi Liu, Hangbing Lv, Ming Wang, Hongwei Xie, Haitao Sun, Pengxiao Sun, Jordi Su?é and Ming Liu. Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology

15. Ming Wang, Chong Bi, Ling Li, Shibing Long, Qi Liu, Hangbing Lv, Nianduan Lu, Pengxiao Sun and Ming Liu. Thermoelectric Seebeck effect in oxide-based resistive switching memory

16. Haitao Sun, Qi Liu, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li, and Ming Liu. Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology

17. Hangbing Lv, Xiaoxin Xu, Hongtao Liu, Ruoyu Liu, Qi Liu, Writam Banerjee, Haitao Sun, Shibing Long, Ling Li, and Ming Liu. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

18. Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, and Ming Liu. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

19. Hongtao Liu, Hangbing Lv*, Baohe Yang, Xiaoxin Xu, Ruoyu Liu, Qi Liu, Shibing Long, and Ming Liu*. Uniformity improvement of 1T1R RRAM with gate voltage ramp programming

20. Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu. Bipolar one diode-one resistor integration for high-density resistive memory applications

21. Hangbing Lv, Yingtao Li, Qi Liu, Shibing Long, Ling Li, and Ming Liu, Self-rectifying resistive switching device with a-Si/WO3 bilayer

22. Haitao Sun, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Xiaoyu Liu, Xiaoyi Yang, Jiebin Niu, and Ming Liu. Overcoming the dilemma between RESET current and data retention of RRAM by lateral dissolution of conducting filament

23. Qi Liu, Jun Sun, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu. In-situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

24. Ming Wang, Hangbing Lv, Qi Liu, Yingtao Li, Zhongguang Xu, Shibing Long, Hongwei Xie, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu. Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance

25. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu. Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device

26. Wentai Lian, Hangbing Lv, Qi Liu, Shibing Long, Wei Wang, Yan Wang, Yingtao Li, Sen Zhang, Yuehua Dai, Junning Chen and Ming Liu. Improved resistive switching uniformity in Cu/HfO2/Pt devices by using current sweeping mode

27. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Su Liu and Ming Liu. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

28. Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, Jiebin Niu, Zongliang Huo, Junning Chen, and Ming Liu. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

29. Qi Liu, Shibing Long, Wei Wang, S. Tanachutiwat, Yingtao Li, Qin Wang, Manhong Zhang, Junning Chen and Ming Liu. Low Power and Highly Uniform Switching in ZrO2-based ReRAM with A Cu Nanocrystal Insertion Layer

30. Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, and Ming Liu. ZrO2-based memory cell with a self-rectifying effect for crossbar WORM memory application

31. Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, and Ming Liu. Resistive switching properties of Au/ZrO2/Ag structure for low voltage nonvolatile memory applications

32. Yan Wang, Hangbing Lv, Wei Wang, Qi Liu, Shibing Long, Qin Wang, Zongliang Huo, Sen Zhang, Yingtao Li, Qingyun Zuo, Wentai Lian, Jianhong Yang and Ming Liu. Highly stable radiation hardened resistive switching memory

33. Chenxin Zhu, Zongliang Huo, Zhongguang Xu, Manhong Zhang, Qin Wang, Jing Liu, Shibing Long, and Ming Liu. Performance enhancement of multi-level cell nonvolatile memory by using a bandgap engineered high-k trapping layer

34. Yan Wang, Qi Liu, Shibing Long, Wei Wang, Qin Wang, Manhong Zhang, Sen Zhang, Yingtao Li, Qingyun Zuo, Jianhong Yang and Ming Liu. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

35. Shiqian Yang, Qin Wang , Manhong Zhang, Shibing Long, Jing Liu, Ming Liu. Titanium tungsten nanocrystals embedded in SiO2/Al2O3 stacked gate dielectric for low-voltage operation in non-volatile memory

36. Jing Liu, Qin Wang, Shibing Long, Manhong Zhang and Ming Liu. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

37. Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Junning Chen, Ming Liu. Improvement of Resistive Switching Properties in ZrO2-based ReRAM with Implanted Ti Ions

38. Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, Ming Liu, Manhong Zhang, and Junning Chen. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

39. Qingyun Zuo, Shibing Long, Qi Liu, Sen Zhang, Qin Wang, Yingtao Li, Yan Wang, and Ming Liu. Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

40. Weihua Guan, Shibing Long, Qi Liu, Ming Liu, Wei Wang. Nonpolar nonvolatile resistive switching in Cu doped ZrO2

41. Weihua Guan, Ming Liu, Shibing Long, Qi Liu, Wei Wang. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

42. Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, and Junning Chen. Resistive switching memory effect of ZrO2 films with Zr+ implanted

43. Weihua Guan, Shibing Long, Rui Jia, Ming Liu. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

44. Weihua Guan, Shibing Long, Ming Liu, Qi Liu, Yuan Hu, Zhigang Li, Rui Jia. Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

45. Weihua Guan, Shibing Long, Ming Liu, Zhigang Li, Yuan Hu and Qi Liu. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide

1. 國(guó)家優(yōu)秀青年科學(xué)基金項(xiàng)目“新型非揮發(fā)性阻變存儲(chǔ)器”

2. 自然基金面上項(xiàng)目“三維集成高密度阻變存儲(chǔ)器基礎(chǔ)研究”

3. 自然基金面上項(xiàng)目“摻雜提高二元金屬氧化物電致電阻轉(zhuǎn)變性能的作用機(jī)理研究”

4. 自然基金面上項(xiàng)目“面向SOC的高性能納米硅單電子器件研究”

5. 863探索導(dǎo)向類項(xiàng)目“基于二元金屬氧化物的阻變存儲(chǔ)器”

6. 973課題“新型存儲(chǔ)器件及工藝基礎(chǔ)研究”

7. 973課題“納米尺度硅基集成電路中新材料的基礎(chǔ)研究”

8. 國(guó)家科技重大專項(xiàng)子課題“32nm RRAM關(guān)鍵工藝和技術(shù)”

9. 中國(guó)科學(xué)院重大科研裝備研制項(xiàng)目“離子束濺射與刻蝕系統(tǒng)”

10.中國(guó)科學(xué)院微電子研究所微電子器件與集成技術(shù)重點(diǎn)實(shí)驗(yàn)室課題“二元金屬氧化物電阻轉(zhuǎn)變機(jī)理研究”

11. 中國(guó)科學(xué)院微電子研究所所長(zhǎng)基金項(xiàng)目“金屬納米晶浮柵非揮發(fā)性存儲(chǔ)器”

1. 一種納米尺度非揮發(fā)性阻變存儲(chǔ)器單元及其制備方法

2. 多功能離子束濺射與刻蝕及原位物性分析系統(tǒng)

3. 多功能離子束濺射設(shè)備

5. 用納米晶材料作為庫(kù)侖島的納米電子器件及其制作方法

6. 一種金屬納米晶薄膜的制備方法

7. 一種硅基側(cè)柵單電子晶體管及其制作方法

8. 一種SOI基頂柵單電子晶體管及其制備方法

9. 一種SOI基頂柵單電子晶體管及其制備方法

10. 一種納米級(jí)庫(kù)侖島的制備方法

11. 一種用負(fù)性電子抗蝕劑制備納米電極的方法

12. 采用正性電子抗蝕劑制備屬納米電極的方法