2003年7月獲復(fù)旦大學(xué)材料科學(xué)系電子科學(xué)與技術(shù)專業(yè)理學(xué)學(xué)士學(xué)位，

2008年7月獲中國科學(xué)院上海微系統(tǒng)與信息技術(shù)研究所工學(xué)博士學(xué)位。

2009年赴美國耶魯大學(xué)電子工程系從事研究工作，包括鐵電材料存儲器科研項(xiàng)目的物理機(jī)制、工藝、模型方面工作。

2010年8月以“春蕾行動(dòng)”引進(jìn)，任新能源所副研究員，從事納米電子學(xué)方面的研究，包括太陽能、薄膜晶體管等。

已被Appl. Phy. Lett.、IEEE Electron Device Letters、 IEEE Trans. on Electron Devices等一系列SCI/EI雜志發(fā)表或接收10余篇文章，申請中國專利3項(xiàng)，已獲批專利1項(xiàng)。

納米器件光電特性表征、模擬、設(shè)計(jì)與工藝改進(jìn)；

薄膜晶體管和太陽能電池的應(yīng)用研究；

以第一作者發(fā)表JCR1區(qū)論文2篇（其中1篇獲中科院寧波材料所首屆最佳論文獎(jiǎng)），2區(qū)論文7篇，申請專利6項(xiàng)。

[1] M. Dai and Q. Wan. Modeling Novel Double-in-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors Nano Lett. 11, 3987 (2011)

[2] M. Dai, G. Wu, Y. Yang, J. Jiang, L. Li, and Q. Wan. Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature. Applied Physics Letter 98, 093506 (2011)
[3] M. Dai, G. Wu, Y. Yang, J. Huang, L. Li, J. Gong, and Q. Wan. Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-Layer Thin Film Transistors. Appl. Phys. Lett. 98, 153501 (2011)
[4] M. Dai, Y. Yang, G. Wu, L. Li, J. Huang, J.Jiang, and Q. Wan. Density-of-State and Trap Modeling of Oxide-Based Electric-Double-Layer TFTs. IEEE Electron Device Letters 32, 512 (2011)
[5] M. Dai. Lifetime Model for Advanced N-Channel Transistor Hot-Carrier-Injection Degradation. IEEE Electron Dev. Lett. 31, 525 (2010)
[6] M. Dai, C. Gao, K. Yap, Y. Shan, Z. Cao, K. Liao, L. Wang, B. Cheng, S. Liu. A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion. IEEE Trans. on Electron Devices 55, 1255 (2008)
[7] M. Dai, A. Yap, K. Huang, S. Y. Huang, J. Wang, S. Wang, I. Jiang, W. J. Zhang, L. Yi, A. Cheng, S. H. Liu, and K. Y. Liao. Modified Substrate Current Model for High Voltage N-Channel Metal-Oxide-Semiconductor Transistor and Its Implication on Transistor Design. Appl. Phys. Lett. 91, 233504 (2007)
[8] A. Lu, M. Dai, J. Sun, J.Jiang, and Q. Wan. Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates. IEEE Electron Device Letters 32, 518 (2011)
[9] J. Jiang, M. Dai, J. Sun, B.Zhou, A. Lu, and Q. Wan. Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous SiO2-based Solid Electrolyte. Journal of Applied Physics,109, 054501(2011)
[10] M. Dai and K. Yap. Observation and mechanism explanation of the parasitic charge pumping current. Microelectronics Reliability 50, 1915 (2010)
[11] M. Dai, S. Kim, A.Yap, S. Liu, A. Cheng and L. Yi. A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET. Microelectronics Reliability 48, 504 (2008)

主持多項(xiàng)科研項(xiàng)目，包括國際合作項(xiàng)目、國家自然科學(xué)基金、寧波市自然科學(xué)基金、中科院寧波材料所“春蕾行動(dòng)”計(jì)劃等；作為骨干參與國家自然科學(xué)基金面上項(xiàng)目、中科院知識創(chuàng)新工程重要方向性項(xiàng)目等。

入選中科院青年創(chuàng)新促進(jìn)會(huì)；

入選“寧波市領(lǐng)軍拔尖人才培養(yǎng)工程”；

入選中國科學(xué)院寧波工研院“春蕾計(jì)劃”；