人物經(jīng)歷
曾于1984年和1990年先后在日本東京大學工學部和科學技術(shù)廳無機材料研究所（筑波）作訪問學者。
1996年參加日本的MRS學術(shù)會議，其后去長崗科技大學、東京大學等進行學術(shù)交流。2004年去美國斯坦福大學，羅切斯特大學進行學術(shù)交流。
研究方向
無機光電子與功能材料的制備及物性。
納米快離子導體的制備和物性研究。
主要貢獻
激光紅寶石體單晶的研制獲中科院科技進步二等獎；紅外體單晶的研制獲中科院自然科學三等獎；非晶Ag-Li快離子導體研究獲中科院自然科學三等獎。迄今已在國內(nèi)外核心刊物發(fā)表學術(shù)論文60余篇。
在研項目
晶態(tài)SiC薄膜的制備及光學性質(zhì)；納米快離子導體的制備及物性。
近期發(fā)表文章
1. Origin of the blue photoluminescence from SiO2（SiC）/SiC on Si substrate。APPLIED PHYSICS LETTERS, 89 （14）: Art. No. 141913 OCT 2 2006.
2. Enhanced green photoluminescence from ZnO films prepared by TFA-MOD method。MATERIALS LETTERS, 59 （24-25）: 3042-3045 OCT 2005.
3. Mechanism of intense blue photoluminescence in silica wires。SOLID STATE COMMUNICATIONS, 135 （4）: 247-250 JUL 2005.
4. Synthesis and room temperature photo luminescence of AgI nanoparticles embedded in silica sol-gel coating。SOLID STATE IONICS, 175 （1-4）: 651-654 Sp. Iss. SI NOV 30 2004.
5. Room temperature photoluminescence property boron-doped sol-gel silica。MATERIALS RESEARCH BULLETIN, 39 （6）: 747-753 MAY 5 2004.
6. Photoluminescence property of ZnO-SiO2 composites synthesized by sol-gel method。JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 （23）: 2972-2975 DEC 7 2003.
7. Optical properties of nanometre AgI-silica composite synthesized by a simple quenching method。JOURNAL OF PHYSICS-CONDENSED MATTER, 15 （27）: 4869-4876 JUL 16 2003.
8. Room temperature photoluminescence from Zr4+-doped sol-gel silica。SOLID STATE COMMUNICATIONS, 126 （11）: 639-643 JUN 2003.
9. Ionic conductivity of nano-scale gamma-AgI。PHYSICA B-CONDENSED MATTER, 325 （1-4）: 357-361 JAN 2003.
10. Growth of crystalline SiC film free of cavities by heating PS/silica sol-gel coatings on Si （111） substrate。MATERIALS LETTERS, 57 （5-6）: 1179-1183 JAN 2003.
11. Intense ultraviolet and green photoluminescence from sol-gel derived silica containing hydrogenated carbon。JOURNAL OF PHYSICS-CONDENSED MATTER, 14 （45）: 11867-11874 NOV 18 2002.
12. Thermochemical process occurring in PLD-derived SiC films during vacuum annealing。APPLIED SURFACE SCIENCE, 193 （1-4）: 204-209 JUN 5 2002.
13. Effect of annealing on SiC thin films prepared by pulsed laser deposition。DIAMOND AND RELATED MATERIALS, 8 （12）: 2099-2102 DEC 1999.
14. The preparation of single-crystal 4H-SiC film by pulsed XeCl laser deposition。THIN SOLID FILMS, 338 （1-2）: 93-99 JAN 29 1999.
