基本內(nèi)容
高坤元，教授，1999年3月畢業(yè)于清華大學(xué)材料科學(xué)與工程系，獲博士學(xué)位。1998年12月，在博士學(xué)習(xí)階段參與研究的工作"離子束材料改性中若干基礎(chǔ)性問題的研究"獲得北京市科學(xué)技術(shù)進(jìn)步一等獎(jiǎng)。其后于2000年2月起在Augsburg大學(xué)作為德國(guó)洪堡基金會(huì)資助的洪堡學(xué)者系統(tǒng)研究了二六族半導(dǎo)體納米顆粒埋層的形成機(jī)理。2002年3月至2007年6月，受聘于德國(guó)Erlangen-Nuremberg大學(xué)，作為主研人員參加一德國(guó)科研聯(lián)合會(huì)的大型項(xiàng)目之分項(xiàng)目，以及主持研究了一巴伐利亞科研基金會(huì)的項(xiàng)目，主要工作是應(yīng)用厚度可原子層級(jí)精確可控的原子層沉積技術(shù)（Atomic Layer Deposition）制備超薄氧化物膜，并對(duì)其在半導(dǎo)體SiC和Si的界面性質(zhì)進(jìn)行研究。于國(guó)內(nèi)外刊物已發(fā)表論文25篇。2008年9月起，為北京工業(yè)大學(xué)材料學(xué)院教師。
Representative Publications:
lK. Y. Gao,T. Seyller, and L. Ley, How the solid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account,Solid State Communications, 139(7), 370-375 (2006).
lTh. Seyller, K.V. Emtsev, F. Speck,K.Y. Gaoand L. Ley, Schottky barrier between 6H-SiC and graphite u2013 Implications for metal / SiC contact formation,Applied Physics Letters, 88, 242103 (2006).
lK. Y. Gao, F. Speck, K. Emtsev, T. Seyller, L. Ley, M. Oswald, and W. Hansch, The interface of atomic layer deposited Al2O3on H-terminated silicon,physica status solidi (a)203, No. 9, 2194-2199 (2006).
lTh. Seyller, K. V. Emtsev,K. Y. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J. D. Riley, R.C.G. Leckey, O. Rader, A. Varykholov, A. M. Shikin, Structural and electronic properties of graphite layers grown on SiC(0001),Surface Science, 600, 3906 (2006).
lK.Y. Gao, Th. Seyller, K. Emtsev, L. Ley, F. Ciobanu, G. Pensl, ALD Deposited Al2O3Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere,Materials Science Forum483-485, 559 (2005).
lTh. Seyller,K.Y. Gao, L. Ley, F. Ciobanu, G. Pensl, A. Taddich, J.D. Riley, and R. G. C. Leckey, Structural and electronic properties of the 6H-SiC(0001)/Al2O3interface prepared by atomic layer deposition,Materials Science Forum457-460, 1369 (2004).
lK.Y. Gao,Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Taddich, J.D. Riley, and R. G. C. Leckey, Al2O3prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001),Applied Physics Letters, 83(9), 1830-1832 (2003).
lK.Y. Gao, H. Karl, I. Grosshans, W. Hipp and B. Stritzker, Comparative study of as-implanted and pre-damaged ion-beam-synthesized ZnS nanocrystallites in SiO2,Nuclear Instruments and Methods in Physics Research B, 196, 68-74 (2002).
lK.Y. Gaoand B.X. Liu, High current Ni-ion implantation to synthesize NiSi2layers on Si with very low resistivity,Nuclear Instruments and Methods in Physics Research B, 148 (1-4), 615-620 (1999).
