學(xué)歷及工作簡(jiǎn)歷
1987.9—1991.7 武漢大學(xué)物理系本科
1991.9—1993.7 武漢大學(xué)物理系碩士研究生（提前攻博）
1993.9—1996.7 復(fù)旦大學(xué)物理二系博士研究生
1996.9—1998.7 武漢大學(xué)物理科學(xué)與技術(shù)學(xué)院博士后
1998.7—1999.5 武漢大學(xué)物理科學(xué)與技術(shù)學(xué)院 副教授
1999.5—1999.11 日本筑波大學(xué)物理工學(xué)系外國(guó)人研究員
2000.2—2002.2 日本學(xué)術(shù)振興會(huì)（JSPS）外國(guó)人特別研究員（ID: P99261）
2002.6—2005.6 日本原子力研究所研究員（JAERI Research fellow）
2005.12— 武漢大學(xué)物理科學(xué)與技術(shù)學(xué)院 教授
科學(xué)研究
參加及主持的科研項(xiàng)目
1．Ⅲ-Ⅴ族半導(dǎo)體缺陷結(jié)構(gòu)、電荷態(tài)及亞穩(wěn)態(tài)的正電子研究 國(guó)家自然科學(xué)基金 9.5萬(wàn)元 參加 順利結(jié)題
2．用正電子譜學(xué)研究高分子固體電解質(zhì)的微觀結(jié)構(gòu)及導(dǎo)電機(jī)理 國(guó)家自然科學(xué)基金 9.5萬(wàn)元 參加 順利結(jié)題
3．用慢正電子技術(shù)研究半導(dǎo)體表面界面缺陷 湖北省自然科學(xué)基金 2.0萬(wàn)元 主持 順利結(jié)題
4．用正電子湮沒研究重?fù)诫s半導(dǎo)體載流子飽和的微觀機(jī)制 武漢大學(xué)自強(qiáng)基金 3.0萬(wàn)元 主持 順利結(jié)題
5. 半導(dǎo)體缺陷的正電子譜學(xué)研究 教育部青年骨干教師基金 12萬(wàn)元 主持 順利結(jié)題
6．沸石中半導(dǎo)體納米團(tuán)簇材料的正電子研究 國(guó)家自然科學(xué)基金 20萬(wàn)元 主持 順利結(jié)題
7．具有高慢化效率和壽命測(cè)量功能的新型正電子束研究 國(guó)家自然科學(xué)基金 40萬(wàn)元 參加 正在進(jìn)行
發(fā)表論文
近期發(fā)表的部分論文如下：
[1] Electron Irradiation Induced Defects in ZnO Studied by Positron Annihilation
Z. Q. Chen, M. Maekawa, A. Kawasuso，S. Sakai, and H. Naramoto
Physica B, in press. (Reference ID: PHYSB3617)
[2] Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam
Z. Q. Chen, M. Maekawa, A. Kawasuso, R. Suzuki, and T. Ohdaira
Appl. Phys. Lett. 87, 091910 (2005)
[3] Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam
Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
Phys. Rev. B71, 115213 (2005)
[4] Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition
Z. Q. Chen, S. Yamamoto, A. Kawasuso, Y. Xu, and T. Sekiguchi
Appl. Surf. Sci. 244, 377 (2005)
[5].Production and recovery of defects in phosphorus implanted ZnO
Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
J. Appl. Phys. 97, 013528 (2005)
[6].Evolution of voids in Al+-implanted ZnO probed by a slow positron beam
Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
Phys. Rev. B69, 035210(2004)
[7].Ion-implantation Induced Defects in ZnO Studied by a Slow Positron Beam
Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki and A. Kawasuso
Material Science Forum, Vol.445-446, 57(2004)
[8].N+ ion-implantation induced defects in ZnO studied by slow positron beam
Z. Q. Chen, T. Sekiguchi, X. L. Yuan, M. Maekawa, and A. Kawasuso
J.Phys.:Condens.Matter, 16, S293(2004)
[9].Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodoluminescence and Hall measurements
Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan and T. Sekiguchi
J. Appl. Phys. 94, 4807(2003)
[10].Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends
Z. Q. Chen, A. Uedono, T. Suzuki and J.S. He
J. Radioanal.& Nucl. Chem., Vol.255, no.2, 291-294(2003)
[11].Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
Z. Q. Chen, A. Uedono, Y.Y. Li and J.S. He
Japanese J. Appl. Phys. part 1, No.4A, 2146(2002)
[12].Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Separation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams
Z. Q. Chen, A. Uedono, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira and T. Mikado
Appl. Sur. Sci. 194, no.1-4, 112(2002)
[13].Free volume in polycarbonate studied by positron annihilation: Effects of free radicals and trapped electrons on positronium formation
Z. Q. Chen, T.Suzuki, K.Kondo, A.Uedono, Y.Ito
Japanese J. Appl. Phys. Part 1, 40, 5036(2001)
[14].Temperature and Irradiation Effects on Positronium Formation in Polycarbonate
Z. Q. Chen, T.Suzuki, A.Uedono, S.Tanigawa, Y.Ito
Mater. Sci. Forum. 363-365, 297(2001)
[15].Discrimination of Defects in III-V Semiconductors by Positron Lifetime Distribution Measurement
Z. Q. Chen, Z.Wang and S.J.Wang
Radiation Phys. Chem., 58, 703 (2000)
[16].Application of Positron Lifetime Distribution for the Discrimination of Defects in Semiconductors
Z. Q. Chen, Z.Wang and S.J.Wang
Nucl. Instr. Meth. B, 160,139 (2000)
[17].Investigation of Defects in High-energy Heavy Ion Implanted GaAs
Z. Q. Chen, Z.Wang and S.J.Wang
Applied Radiation and Isotopes, 52, 39 (2000)
