個(gè)人簡歷
1982年7月畢業(yè)于大連理工大學(xué)物理系。
1991年在瑞典Lund大學(xué)獲得博士學(xué)位。
瑞典Lund大學(xué)物理系教授。
現(xiàn)為北京大學(xué)信息學(xué)院物理電子所教授。
主要學(xué)術(shù)及社會(huì)兼職: 美國《Physics Review B》評(píng)審員
所屬實(shí)驗(yàn)室：納米器件物理與化學(xué)教育部重點(diǎn)實(shí)驗(yàn)室
研究方向
（1）半導(dǎo)體納米結(jié)構(gòu)物理，包括生長、能譜結(jié)構(gòu)、電學(xué)與光學(xué)性質(zhì)等實(shí)驗(yàn)與理論研究
（2）納電子器件的制作、測(cè)量、物理與應(yīng)用研究
（3）凝聚態(tài)多體物理，包括強(qiáng)關(guān)聯(lián)、自旋糾纏等多體物理現(xiàn)象的實(shí)驗(yàn)與理論研究
科研經(jīng)歷
（1） 承擔(dān)和領(lǐng)導(dǎo)了十幾項(xiàng)由瑞典國家研究局等國家基金機(jī)構(gòu)批準(zhǔn)的研究項(xiàng)目
（2） 承擔(dān)或領(lǐng)導(dǎo)了兩項(xiàng)歐盟研究項(xiàng)目
（3） 正在北京大學(xué)信息科學(xué)和技術(shù)學(xué)院創(chuàng)建半導(dǎo)體納米結(jié)構(gòu)實(shí)驗(yàn)室
（4） 已發(fā)表SCI論文140余篇，SCI引用2000多次
2011年度國家973重大科學(xué)研究計(jì)劃"新型高性能半導(dǎo)體納米線電子器件和量子器件"首席科學(xué)家
論文
1. Jie Sun, Erik Lind, Ivan Maximov, and H. Q. Xu, Memristive and Memcapacitive Characteristics of a Au/Tiu2013HfO2u2013InP/InGaAs Diode, IEEE Electron Device Letters 32, 131 (2011).
2. L. H. Kristinsdóttir, J. C. Cremon, H. A. Nilsson, H. Q. Xu, L. Samuelson, H. Linke, A. Wacker, and S. M. Reimann, Signatures of Wigner localization in epitaxially grown nanowires, Physical Review B 83 (Rapid Communications), 041101(R) (4 pages) (2011).
3. NatthaponNakpathomkun, H. Q. Xu, and Heiner Linke, Thermoelectric efficiency at maximum power in low-dimensional systems, Physical Review B 82, 235428 (9 pages) (2010)
4. FantaoMeng, Jie Sun, MariuszGraczyk, Kailiang Zhang, Mika Prunnila, JouniAhopelto, Peixiong Shi, Jinkui Chu, Ivan Maximov, and H. Q. Xu, Nonlinear electrical properties of Si three-terminal junction devices, Applied Physics Letters 97, 242106 (3 pages) (2010).
5. FengZhai, Xiaofang Zhao, Kai Chang, and H. Q. Xu, Magnetic barrier on strained graphene: A possible valley filter, Physical Review B 82, 115442 (5 pages ) (2010).
6. H. A. Nilsson, O. Karlström, M. Larsson, P. Caroff, J. N. Pedersen, L. Samuelson, A. Wacker, L.-E. Wernersson, and H. Q. Xu, Correlation-induced conductance suppression at level degeneracy in a quantum dot, Physical Review Letters 104, 186804 (4 pages ) (2010).
7. Jie Sun, Marcus Larsson, Ivan Maximov, and H. Q. Xu, Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-κ dielectric, Applied Physics Letters 96, 162107 (3 pages) (2010).
8. Jianing Chen, Gabriela Conache, Mats-Erik Pistol, Struan M. Gray, Magnus T. Borgström, HongxingXu, H. Q. Xu, Lars Samuelson, and Ulf Håkanson, Probing strain in bent semiconductor nanowires with Raman spectroscopy, Nano Letters 10, 1280u20131286 (2010).
9. Fredrik Boxberg, NielsSondergaard, and H. Q. Xu, Photovoltaics with piezoelectric core-shell nanowires, Nano Letters 10, 1108u20131112 (2010). 10. T. P. Martin, A. Szorkovszky, A. P. Micolich, A. R. Hamilton, C. A. Marlow, R. P. Taylor, H. Linke, and H. Q. Xu, The field-orientation dependence of the 1D enhancement in Zeeman spin-splitting in InGaAs quantum point contacts, Physical Review B 81 (Rapid Communications), 041303(R) (4 pages) (2010).
11. M. Larsson, H. A. Nilsson, H. Hardtdegen, and H. Q. Xu, g-factor and exchange energy in a few-electron lateral InGaAs quantum dot, Applied Physics Letters 95, 192112 (3 pages) (2009).
12. Henrik A. Nilsson, Philippe Caroff, ClaesThelander, Marcus Larsson, Jakob B. Wagner, Lars-Erik Wernersson, Lars Samuelson, and H. Q. Xu, Giant, level-dependent g-factors in InSb nanowire quantum dots, Nano Letters 9, 3151-3156 (2009).
13. FengZhai, Xiaofang Zhao, and H. Q. Xu, Rectification of spin-bias-induced charge currents, Applied Physics Letters 94, 262103 (3 pages) (2009).
14. P. Brusheim and H. Q. Xu, Field-driven geometrical phases in a time-periodic quantum system, Physical Review B 79, 205323 (6 pages) (2009). 15. D. Csontos, P. Brusheim, U. Zülicke, and H. Q. Xu, Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splitting, Physical Review B 79, 155323 (16 pages) (2009).
16. Jie Sun, Marcus Larsson, Ivan Maximov, Hilde Hardtdegen, H. Q. Xu, Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric, Applied Physics Letters 94, 042114 (3 pages) (2009).
