周鵬教授，博士生導(dǎo)師。先后獲得復(fù)旦大學(xué) “卓學(xué)計(jì)劃”人才支持，上海市青年科技啟明星、國(guó)家自然基金委優(yōu)秀青年資助。微電子學(xué)院先進(jìn)電子器件研究所副所長(zhǎng)，主持“上海市微納器件與工藝專業(yè)技術(shù)服務(wù)平臺(tái)”工作。于2000年、2005年分別獲復(fù)旦大學(xué)物理學(xué)學(xué)士和博士學(xué)位。2006-2007年在首爾國(guó)立大學(xué)Inter-大學(xué)半導(dǎo)體高級(jí)研究中心任訪問學(xué)者。主持了國(guó)家重大專項(xiàng)子課題、自然科學(xué)基金、上海市教委科技創(chuàng)新重點(diǎn)項(xiàng)目、973子課題等12項(xiàng)國(guó)家部委科研項(xiàng)目。 出版中英文5本著作章節(jié)，在Nature Nano，Advanced Materials，Nano Lett，Advanced Functional Materials，2D Materials, ACS Nano，Carbon, Applied Physics Letters, Small, IEEE Electron Device Letters等發(fā)表第一作者及通信作者論文50余篇。其中2007年發(fā)表在Applied Physics Letters的研究工作已被SCI他引141次。獲得授權(quán)中國(guó)發(fā)明專利6項(xiàng)。所培養(yǎng)學(xué)生攻讀學(xué)位期間獲得了國(guó)家獎(jiǎng)學(xué)金、企業(yè)獎(jiǎng)學(xué)金及各類一等獎(jiǎng)學(xué)金，畢業(yè)后進(jìn)入華為、展訊、AMD及SMIC等國(guó)際影響力企業(yè)。

1996.9—2000.6，復(fù)旦大學(xué)物理學(xué)系，獲學(xué)士學(xué)位

2000.9—2005.6，復(fù)旦大學(xué)信息科學(xué)與工程學(xué)院，獲博士學(xué)位

2006.9—2007.8，韓國(guó)首爾國(guó)立大學(xué)Inter-University半導(dǎo)體研究中心，訪問學(xué)者

國(guó)家自然科學(xué)基金項(xiàng)目，基于過渡金屬氧化物薄膜的新型電阻式存儲(chǔ)的可靠開關(guān)機(jī)理及器件制備技術(shù)研究

國(guó)家自然科學(xué)基金項(xiàng)目，碳基電路中的納米尺度阻式存儲(chǔ)穩(wěn)定實(shí)現(xiàn)及物理機(jī)制

上海市教育委員會(huì)科技創(chuàng)新重點(diǎn)項(xiàng)目，高遷移率石墨烯/柵疊層制備及物理特性研究

國(guó)家“極大規(guī)模集成電路制造技術(shù)及成套工藝”重大專項(xiàng)項(xiàng)目，石墨烯電子器件與集成技術(shù)研究

周 鵬，《半導(dǎo)體存儲(chǔ)器概論》，北京郵電大學(xué)出版社，ISBN:978-7-5635-3658-0,2013，345千字。Peng Zhou, Lin Chen，Hangbing Lv，Haijun Wan，Qingqing Sun, Chapter u2018Nonvolatile Memory Device: Resistive Random Access Memoryu2019 in Book u2018Nano-Semiconductors Device and Technologyu2019，Taylor & Francis Group， ISBN:978-1-4398-4835-7，2011，20千字。本書已被科學(xué)出版社引進(jìn)翻譯出版。Peng Zhou, Lin Chen，Hangbing Lv，Haijun Wan，Qingqing Sun, Chapter u2018Nonvolatile Memory Device: Resistive Random Access Memoryu2019 in Book u2018Nanoscale Semiconductor Memories: Technology and Applicationsu2019，Taylor & Francis Group，ISBN: 978-1-4665-6060-4，2013，20千字。

代表性論文：

Zhou Peng, Chen Lin，Lv Hangbing，Wan Haijun，Sun Qingqing, Chapteru2018Nonvolatile Memory Device: Resistive Random Access Memoryu2019in Booku2018Nano-Semiconductors Device and Technologyu2019，Taylor & Francis Group，ISBN：2011.

第一作者和通信作者論文：

Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang andPeng Zhou*，A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications，Nature Nanotechnology, Apr.9，2018. （第一作者&通訊作者）Huawei Chen, Yantao Chen, Heng Zhang, David Wei Zhang,Peng Zhou,* and Jia Huang， Suspended SnS2 layers by light assistance for ultrasensitive ammonia detection at room temperature，Advanced Functional Materials, 2018,1801035 （通訊作者）Xiao Yan, David Wei Zhang，Chunsen Liu, Wenzhong Bao, Shuiyuan Wang, Shijin Ding Gengfeng Zheng and Peng Zhou* , High performance amplifier element realization via MoS2/GaTe heterostructures, (Advanced Science,1700830, 2018). (通信作者)Huawei Chen, Jingyu Li, Xiaozhang Chen, David Wei Zhang and Peng Zhou*, Dramatic switching behavior in suspended MoS2 field-effect transistors, (Semiconductor science and technology, 33,024001,2018). (通信作者)Chao Li, Xiao Yan, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructure in MoS2 transistors, (Applied Physics Letters 111, 193502, 2017) (通信作者)Chao Li, Xiao Yan, Xiongfei Song, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different alignment（Nanotechnology,28,415201, 2017)Xiongfei Song, Zhongxun Guo, Qiaochu Zhang, Peng Zhou*, Wengzhong Bao* and David Wei Zhang, Progress of large-scale synthesis and electronic device application of two-dimensional transition metal dichalcogenides, (Small, 1700098, 2017). (通信作者，邀請(qǐng)綜述)Xiao Yan, Chunsen Liu, Chao Li, Wengzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Tunable SnSe2/Wse2 heterostructure tunneling field effect transitor, (Small, 1701478, 2017). (通信作者)Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul K.Chu, Peng Zhou* Zengfeng Di*, and Xi Wang, Germanium-assisted direct growth of graphene on arbitrary dielectric substrates for heating devices, (Small, 1700929, 2017). (通信作者)Chunsen Liu, Xiao Yan, Enze Zhang, Xiongfei Song, Qingqing Sun, Shijin Ding, Wengzhong Bao, Faxian Xiu*, Peng Zhou* and David Wei Zhang, Various and tunable transport properties of WSe2 transistor formed by metal contacts, (Small, 1604128, 2017). (通信作者)Chunsen Liu, Xiao Yan, Jianlu Wang*, Shijin Ding, Peng Zhou* and David Wei Zhang*, Eliminating over-erase behavior by designing energy band in high speed charge-trap memory based on WSe2, (Small, 1604128, 2017). (通信作者)Yawei Dai, Wenzhong Bao, Linfeng Hu, Chunsen Liu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou* and David Wei Zhang, Forming free and ultralow power erase operation in atomically crystal TiO2 resistive switching, (2D Materials, 4, 2017) doi.org/10.1088/2053-1583. (通信作者)E. Zhang, P. Wang, Z. Li, H. Wang, C. Song, C. Huang, Z.G. Chen, L. Yang, K. Zhang, S. Lu, W.Y. Wang, S. Liu, H. Fang, X. Zhou, H. Yan, J. Zou, X.G. Wan, P. Zhou*, W. Hu, and F.X. Xiu, Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets (ACS Nano, 10, 8067 -8077,2016). (通信作者)Peng Zhou*, Xiongfei Song, Xiao Yan, Chunsen Liu，Lin Chen, Qingqing Sun, and David Wei Zhang, Controlling the work function of molybdenum disulfide by in situ metal deposition（Nanotechnology,27,344002, 2016)X. Yuan, L.Tang, S.S. Liu, P. Wang, Z.G. Chen, C. Zhang, Y. W. Liu, J. Zou, Peng Zhou*，W. Hu, F.X. Xiu，Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy，(Nano Letters，2015，15（5）：3571-3577). (通信作者)（ESI 高引）E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, Peng Zhou*，W. Hu, F.X. Xiu，ReS2-based field-effect transistors and photodetectors， (Advanced Functional Materials，25（26）：4076-4082,2015). (通信作者)Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou,* and Faxian Xiu, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano,9,612-619 ,2015）. (通信作者)Peng Zhou*, Songbo Yang, Qingqing Sun, Lin Chen, Pengfei Wang, Shijin Ding & David Wei Zhang, Direct deposition of uniform high-k dielectrics on graphene,（Scientific Reports ,4(6448),2014). (通信作者)Songbo Yang, Peng Zhou,* Lin Chen, Qingqing Sun, Pengfei Wang, Shijin Ding, Anquan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, （Journal of Materials Chemistry C , 2,8042—8046,2014）. (通信作者)Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan，Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang， Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon，62，157-164,2013）. (通信作者)Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, （Journal of Materials Chemistry C , 2,2548-2552,2013）. (通信作者)Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,（Nanoscale Research Letters ,8, (2013), 91(1-5)Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO （IEEE Transactions on Nanotechnology, 11, 1059, 2012)Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories（Applied Physics Letters, 100, 063509, 2012) (通信作者)Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X.B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning （Applied Physics Letters, 99, 141911, 2011) (通信作者)Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity (IEEE Electron Device Letters. 32，1167-1169, 2011) (通信作者)Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010)Zhou P ,Yin M, Wan H J，Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters, 94, 053510, 2009)Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, （Journal of Vacuum Science &Technology B, 27,1030-1034, 2009）(通信作者)Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi，Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application （Journal of Vacuum Science & Technology B, 26,1030-1033, 2008）Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者)Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters ,90 (18): 183507, 2007) (通信作者)Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X，Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters, 83 (19): 3876-3878, 2003)

合作者發(fā)表論文選錄：

Peng-Fei Wang*, Xi Lin, Lei Liu, Qing-Qing Sun,Peng Zhou, Xiao-Yong Liu, Wei Liu,Yi Gong and David Wei Zhang, A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation，（Science, SCI,影響因子31）,341(6146),(2013),640-643.M. Wang, W. J. Luo, Y. L. Wang, L. M. Yang, W. Zhu,P. Zhou, J. H. Yang, X. G. Gong, Y. Y. Lin*, A Novel CuxSiyO Resistive Memory in Logic Technology with Excellent Data,( 2010 Symposia on VLSI Technology and Circuits, Honolulu, USA)Hangbing Lv, Ming Wang, Haijun Wan, Yali Song, Wenjing Luo,Peng Zhou, Tingao Tang, Yinyin Lin*, R.Huang, S.Song, J. G.Wu, H. M. Wu, M. H. Chi, Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode, (Applied Physics Letters, 94(21), (2009),213502(1-3)).

集成電路工藝和新型二維半導(dǎo)體功能器件。

具體包括原始創(chuàng)新石墨烯上原子層沉積技術(shù)應(yīng)用，下一代非揮發(fā)存儲(chǔ)器工作機(jī)制與大規(guī)模制造工藝，碳基電路存儲(chǔ)器與晶體管集成技術(shù)以及MoS2，BN，NbSe2等其他二維晶體應(yīng)用研究等。為中芯國(guó)際、華虹、士蘭等重要集成電路制造企業(yè)研發(fā)部門提供技術(shù)咨詢。

本科課程：應(yīng)用光伏學(xué)

研究生課程：半導(dǎo)體存儲(chǔ)材料、器件與工藝

2019年8月2日，入選2019年度國(guó)家杰出青年科學(xué)基金建議資助項(xiàng)目申請(qǐng)人名單。