學(xué)習(xí)經(jīng)歷
1980.9~1984.7: 河北大學(xué)電子系學(xué)習(xí)獲學(xué)士學(xué)位.
1985.9~1988.7: 河北大學(xué)電子系學(xué)習(xí)獲碩士學(xué)位. 碩士論文內(nèi)容是有關(guān)激光輔助擴(kuò)散制備淺結(jié)二極管和三極管研究.
1994.9~1997.7: 中國(guó)科學(xué)院半導(dǎo)體所學(xué)習(xí)獲博士學(xué)位. 博士論文內(nèi)容是半導(dǎo)體量子點(diǎn)制備和性質(zhì)研究.
科研經(jīng)歷
1988.9~1994.7: 河北大學(xué)電子系從事教學(xué)和科研工作.
1997.9~1999.9: 北京大學(xué)微電子所做博士后研究, 研究GaN電子器件的制備工藝和器件特性.
1999.10~2000.9: 在加拿大的McMaster University做研究，開展了InGaAsP-InP多量子阱激光器的研究工作。
2000.9月~2002.3: 在美國(guó)Northwestern University繼續(xù)研究工作，研究工作包括：GaInAs/AlInAs量子級(jí)聯(lián)激光、GaN基蘭激光和發(fā)光管。
2002.3~2003.9: 在美國(guó)Ohio State University，從事了AlGaN/GaN異質(zhì)結(jié)構(gòu)肖特基接觸及場(chǎng)效應(yīng)晶體管的研制工作。
2003.12~現(xiàn)在: 山東大學(xué)物理學(xué)院工作.
研究領(lǐng)域
●AlGaN/GaN 異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管研究
近些年來，AlGaN/GaN異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管（AlGaN/GaN HFET）一直作為半導(dǎo)體電子器件研究領(lǐng)域的熱點(diǎn)而引起人們的廣泛關(guān)注和極大興趣。AlGaN/GaN異質(zhì)結(jié)構(gòu)的肖特基接觸是AlGaN/GaN HFET的重要組成部分，肖特基接觸金屬對(duì)AlGaN勢(shì)壘層應(yīng)變影響的機(jī)理至今還不清楚，而肖特基接觸金屬對(duì)AlGaN勢(shì)壘層應(yīng)變的影響將改變AlGaN/GaN異質(zhì)結(jié)構(gòu)二維電子氣密度等相關(guān)參數(shù)，由此對(duì)AlGaN/GaN HFET器件特性產(chǎn)生重要影響。我們的研究擬在通過AlGaN勢(shì)壘層面極化電荷密度的分析計(jì)算，獲取肖特基接觸金屬對(duì)AlGaN勢(shì)壘層應(yīng)變影響的信息，研究肖特基金屬電子與AlGaN勢(shì)壘層界面相互作用的機(jī)制，建立肖特基金屬對(duì)AlGaN/GaN異質(zhì)結(jié)構(gòu)AlGaN勢(shì)壘層應(yīng)變影響的作用模型，以此推動(dòng)GaN基電子器件研究的深入和發(fā)展。該研究包括器件制備、器件特性測(cè)試和器件特性分析.
●低維半導(dǎo)體材料與器件研究
用物理或化學(xué)方法制備低維半導(dǎo)體材料, 通過微電子微細(xì)加工工藝將其制備成低維器件, 研究該材料體系的電子能態(tài)結(jié)構(gòu)、聲子能態(tài)結(jié)構(gòu)、載流子輸運(yùn)及器特性.
●SenTaurus-Device模擬分析半導(dǎo)體器件特性
利用SenTaurus-Device (業(yè)界標(biāo)準(zhǔn)器件的仿真)仿真工具，模擬分析新型半導(dǎo)體器件的器件特性，諸如電流-電壓（I-V）、電容-電壓（C-V）和頻率特性等.
教學(xué)任務(wù)
已承擔(dān)了本科生和研究生以下課程的教學(xué)工作.
本科生課程: 半導(dǎo)體器件物理; 集成電路工藝.
研究生課程: 半導(dǎo)體器件理論; 超晶格材料與器件; 專業(yè)英語
正在參與項(xiàng)目：
1. 國(guó)家自然科學(xué)基金項(xiàng)目：肖特基接觸金屬對(duì)AlGaN勢(shì)壘層應(yīng)變影響研究， 項(xiàng)目號(hào)：10774090, 金額：30.00萬元，研究期限：2008.01-2010.12. 項(xiàng)目負(fù)責(zé)人:林兆軍
2. 參與項(xiàng)目, 納米材料表面生化修飾與POPS的選擇性富 集；2007CB936602；973項(xiàng)目；2007年-2011年。參與者：林兆軍
發(fā)表論文
1 The influence of Schottky contact metals on the strain of AlGaN barrier layers
Zhaojun Lin, Jianzhi Zhao, Timothy Corrigan, Zhen Wang, Zhidong You,
Zhanguo Wang, Wu lu,
Journal of Applied Physics, (2008), Vol.103, P044503.
2 Electron mobility related to scattering caused by the strain variation of AlGaN
barrier layer in strained AlGaN/GaN heterostructures
Jianzhi Zhao, Zhaojun Lin*, Timothy Corrigan, Zhen Wang,
Zhidong You, Zhanguo Wang,
Applied Physics letters, (2007), 91, P173507.
3 Threshold voltage of AlGaN/GaN HFET
Zhaojun Lin, Jianzhi zhao, Min Zhang,
Chinese Journal of Semiconductor, (2007), Vol.28, Supplement, P54-56.
4 Thermal stability of strained AlGaN/GaN heterostructures
Zhang Min, Xiao Hongdi, Lin Zhaojun*,
Chinese Physics letters, (2006), Vol.23(7), P1900-1902.
5 Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures
Zhaojun Lin, Wu Lu
Journal of Applied Physics, (2006), 99, p014504-1
6 Quasi-Enhancement Mode of AlGaN/GaN HEMTs Grown on Sapphire Substrate
Jaesun Lee, Dongmin Liu, Zhaojun Lin, Wu Lu
Solid State Electronics, (2003), 47, pp2081-2084
7 Study of Schottky contacts on Strained AlGaN/GaN heterostructures
Zhaojun Lin, George R. Brandes, Wu Lu.
45th International Electronic Materials Conference, Salt Lake City, United States.
P57.
8 Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures
Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu
Appl. Phys. Lett., (2004), 84 (9), pp.1585-1587
9 Influence of annealed Ohmic contact metals on the polarization of AlGaN barrier layer
Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu
Electronics Letters, Vol. 39, Issue 19, (2003), pp. 1412-1414.
10 Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures:
Determination and effect of metal work functions
Zhaojun Lin, Wu lu, Jaesun Lee, Dongmin Liu
Appl. Phys. Lett., (2003), 82 (24), pp.4364-4366.
11 Characteristics of high quality p type AlxGa1-xN/GaN supper lattices
A. Yasan, R. McClintock, S. R. Darvish, Zhaojun Lin, K. Mi, P. Kung, and
M. Razeghi
Appl.Phys.Lett., (2002), 80 (12), pp.2108-2110.
12 Schottky barriers on n-GaN
Zhaojun Lin, Taiping Zhang, Guoying Wu
Chinese Journal of Semiconductor, (2000), 21(4), pp.369-372.
13 Study on CdSe nanoclusters by transmission electron microscope
Yan Xu, Zhaojun Lin, wei Chen, Keming Fang
Chinese Journal of Semiconductor, (1998), 19(3), pp.181-184.
14 Dielectric constant in quantum dots
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Chinese Science Bulletin, (1998), 43(7), pp.709-713.
15 Encapsulation and potential application of semiconductor clusters in zeolite
Molecular sieves
Wei Chen, Zhanguo Wang, Lanying Lin, Zhaojun Lin, Jiajun Qian
Progress in physics(in Chinese), (1997), 17(1), pp.83-117.
16 The preparation of I2 clusters and their absorption spectra
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Journal of Materials Science and Technology, (1997), 13(6), pp.518-520.
17 Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Solid State Communications, (1997), 105(2), pp.129-134
18 Absorption and luminescence of the surface states in ZnS nanoparticles
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Journal of Applied Physics, (1997), 82(6), pp.3111-3115.
19 New observation on the luminescence of CdS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Solid State Communications, (1997), 101(5), pp.371-375.
20 Thermoluminescence of ZnS nanoparticles
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Appl.Phys.Lett., (1997), 70(11), pp.1465-1467.
21 Photoluminescence of ZnS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Journal of Materials Science and Technology, (1997), 13(5), pp.397-404.
22 Low temperature hFe of silicon bipolar transistor
Shiqun Bo, Zhaojun Lin
Chinese Journal of Semiconductor, (1997), 18(6), pp.454-458.
23 Absorption spectra of Se8-ring clusters in zeolite 5A
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Materials Science&Engineering B, (1997), 47, pp.91-95.
24 The preparation of I2 clusters and their diffusion reflection spectra
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Chinese Science Bulletin, (1997), 42(15), pp.1727-1728.
25 Influence of the ring-ring interaction in Se8-ring clusters on their absorption
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Journal of Materials Science Letters, (1997)16(9), pp.732-734.
26 Size-Dependence of luminescence intensity of ZnS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Proceeding of the 7th China-Japan conferences on materials science and crystal
Growth, (1996), pp.26-27.
27 Absorption and Raman spectra of Se chains in zeolite HZSM-5 and Y
Zhaojun Lin, Zhanguo Wang, Guohua Li, Wei Chen, Lanying Lin
Chinese Journal of Semiconductor, (1996), 17(12), pp.936-939.
28 New observation on the formation of PbS clusters in zeolite Y
Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin
Appl.Phys.Lett., (1996), 68(14), pp.1990-1992.
29 The formation of ZnS cluster in zeolite Y
Wei Chen, Zhaojun Lin, Zhanguo Wang, Lanying Lin
Chinese Journal of Semiconductor, (1996), 17(12), pp.928-931.
30 Absorption and Raman spectra of Se8-ring clusters in zeolite 5A
Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin
Solid State Communications, (1996)100(12), pp.841-843.
31 Some new observation on the formation and optical properties of CdS clusters in
Zeolite Y
Wei Chen, Zhaojun Lin, Zhanguo Wang, Lanying Lin
Solid State Communications, (1996), 100(2), pp.101-104.
任職：
中國(guó)電子學(xué)會(huì)半導(dǎo)體與集成技術(shù)分會(huì)第七屆委員會(huì)委員；
Chinese Physics Letter 雜志評(píng)審。
科研項(xiàng)目
承擔(dān)科研項(xiàng)目 1. 國(guó)家自然科學(xué)基金項(xiàng)目：肖特基接觸金屬對(duì)AlGaN勢(shì)壘層應(yīng)變影響研究， 金額：30.00萬元，研究期限：2008.01-2010.12. 項(xiàng)目負(fù)責(zé)人:林兆軍 2. 參與項(xiàng)目, 納米材料表面生化修飾與POPS的選擇性富 集；973項(xiàng)目；2007年-2011年。參與者：林兆軍 �。ㄔ擁�(xiàng)目是用化學(xué)方法制備納米材料體系，并將納米體系制備成傳感器用于探測(cè)和富集POPS有毒污染分子）�！ �3． 教育部留學(xué)回國(guó)基金項(xiàng)目：GaN氫氣探測(cè)器研究， 3 萬，研究期限： 2006.01-2008.12. 負(fù)責(zé)人：林兆軍 4.國(guó)家自然科學(xué)基金項(xiàng)目：AlGaN/GaN 異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管中與AlGaN勢(shì)壘層應(yīng)變分布相關(guān)的載流子散射機(jī)制研究， 金額：68.00萬元，研究期限：2012.01-2015.12. 項(xiàng)目負(fù)責(zé)人:林兆軍 5. 國(guó)家自然科學(xué)基金重大研究計(jì)劃培育項(xiàng)目：化學(xué)液相技術(shù)制造(ZnS)x(Cu2ZnSnS4)1-x復(fù)合納米晶太陽能電池研究，金額：50.00萬元， 研究期限：2011.01-2013.12.作為項(xiàng)目第二申請(qǐng)人，主要參與太陽能電池性能評(píng)價(jià)工作。
