人物經(jīng)歷
1989年畢業(yè)于北京科技大學(xué)物理系；
1992獲中國科學(xué)院固體物理研究所碩士學(xué)位；
1997年獲德國格廷根大學(xué)自然哲學(xué)博士學(xué)位。
科研成果
王德亮先后在德國格廷根大學(xué)、日本原子技術(shù)聯(lián)合研究中心, 美國和香港科技大學(xué)等學(xué)習(xí)和研究工作10年，一直在國際上的一流研究機(jī)構(gòu)從事研究工作�；貒�，先后設(shè)計和建立多套國內(nèi)最先進(jìn)的薄膜材料制備設(shè)備。實(shí)驗(yàn)室的主要研究方向是半導(dǎo)體薄膜和太陽能電池制備。實(shí)驗(yàn)室具有多種薄膜制備設(shè)備和表征手段。我們的目標(biāo)是制備高轉(zhuǎn)換效率的太陽能電池，因此研究生可以學(xué)到貨真價實(shí)的知識及研究經(jīng)驗(yàn)。畢業(yè)的研究生，在社會上的就業(yè)競爭力很強(qiáng)。 王德亮自1993年以來，在SCI收錄的較高影響因子刊物上共發(fā)表60余篇學(xué)術(shù)論文,論文被廣泛引用，被引用近500次。發(fā)表的刊物包括：Applied Physics Letters, Journal of Applied Physics, IEEE Electronic Device Letter等。多次被邀請在大型國際會議作口頭報告�，F(xiàn)我們制備的CdTe太陽能電池轉(zhuǎn)化效率達(dá)到14.6%，處于國際領(lǐng)先水平。
研究方向
1、凝聚態(tài)物理
2、半導(dǎo)體物理與器件
論文專著
1) Dye-sensitized solar cells with modified TiO2 surface chemical states: the role of Ti3+ - Appl. Phys. Lett. - 2011 - 99, 192104 (2011).
2) Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale - Appl. Phys. Lett. - 2011 - 99, 143502 (2011).
3) Study of interdiffusion reaction at the CdS/CdTe interface - J. Materials Research - 2011 - 26, 697 (2011).
4) Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition - Thin Solid Films - 2010 - 518, 6858 (2010).
5) in-situ observation of phase formation in a Cu-In-2Se precursor layer using micro-Raman scattering spectroscopy - J. Materials Research - 2009 - 24, 2373 (2009).
6) P-type CuInSe2 thin films prepared by selenization of one-step electrodeposited precursors - J. Materials Research - 2009 - 24, 2293 (2009).
7) Lattice vibration fundamentals in nanocrystalline anatase investigated with Raman scattering - J. Phys.: Condens. Matter - 2008 - 20, 085212 (2008).
8) Lattice vibration fundamentals of nanocrystalline anantase: temperature-dependent study using micro-Raman scattering spectroscopy - J Appl Phys. - 2007 - 101, 113501 (2007).
9) Lattice Vibration Fundamentals of Anatase Nanocrystalline TiO2 Thin Films Detected Using Unpolarized Infrared Spectroscopy - Chemistry Letters - 2006 - 35, 884 (2006).
10) Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique - Applied Physics Letters - 2006 - 88, 041913 (2006).
11) Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111)by metalorganic chemical vapor deposition - Journal of Applied.Physics - 2005 - 97(2005)
12) Characterization of GaN grown on patterned Si(111) substrate - Journal of Crystal Growth - 2004 - 272
13) Si-doped cubic GaN grown on Si(001)substrate coated with a thin flat SiC buffer layer - Applied Physics Letters - 2002 - 80
14) Initial growth of hexagonal GaN grown on a Si(111)substrate coated with an ultra-thin SiC buffer layer - Journal of Crystal Growth - 2002 - 236
15) Dislocation core structures in GaN grown on Si(111)subtrate - Philosophy Magazine Letters - 2002 - 82
16) Growth of Hexagonal GaN on si(111) Coated with a Thin Flat SiC Buffer Layer - Applied Physics Letters - 2000 - 77
17) Heteroepitaxial Growth of Cubic GaN on Si(001)Coated with Thin Flat SiC by Plasma-Assisted Molecular Beam Epitaxy - Applied Physics Letters - 2000 - 76
