教育背景

2006.09－2011.08香港科技大學(xué)，電子與計(jì)算機(jī)工程系，博士

2002.09－2006.08 清華大學(xué)，數(shù)理基礎(chǔ)科學(xué)班，學(xué)士

工作履歷

2014.09 - present電子科技大學(xué)，微電子與固體電子學(xué)院，副教授

2011.12－2014.08 電子科技大學(xué)，微電子與固體電子學(xué)院，講師

2011.09 - 2011.12 香港科技大學(xué)，電子與計(jì)算機(jī)工程系，博士后

研究方向?yàn)槠�上電感和變壓器、磁感�?yīng)無線功率傳輸。主要包含以下幾方面的內(nèi)容：新型背面硅嵌入式變壓器結(jié)構(gòu)的設(shè)計(jì)和實(shí)驗(yàn)實(shí)現(xiàn)，多孔硅和磁芯材料在背面硅嵌入式電感和變壓器中的應(yīng)用，片上變壓器在數(shù)字隔離器中的應(yīng)用，使用背面硅嵌入式無線功率接收線圈的無線功率接收芯片，用于飛行器的無線功率傳輸，可穿戴生物傳感器的無線供能。

研究領(lǐng)域

1.隔離變壓器的芯片集成

應(yīng)用：600V以上功率器件的柵極驅(qū)動(dòng)、數(shù)據(jù)總線隔離

主要解決問題：集成信號(hào)隔離變壓器的EMI、Noise、CMTI，集成功率隔離變壓器的低頻效率和隔離能力

2. 功率電感的芯片集成和封裝集成

應(yīng)用：移動(dòng)可穿戴電源管理、處理器電源管理

主要解決問題：給定芯片面積下的電感效率

3. 基于先進(jìn)封裝技術(shù)的芯片配電設(shè)計(jì)

主要解決問題：低封裝成本和復(fù)雜度、低配電網(wǎng)絡(luò)阻抗

4. 基于硅工藝的微型揚(yáng)聲器

主要解決問題：尺寸、聲壓級(jí)、高頻特性

5. 磁感應(yīng)無線功率傳輸中的線圈設(shè)計(jì)

主要解決問題：線圈相互位置擾動(dòng)對(duì)系統(tǒng)的影響、線圈效率

IEEE Transactions on Power Electronics, IEEE Electron Device Letters, IEEE Energy Conversion Congress &Exposition審稿人.

[1]R. Wu, N. Liao, X. Fang, and J.K.O. Sin, “A novel double-side silicon-embedded transformer for 10-MHz, 1-kV-isolation, compact power transfer applications,”IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4542-4545, November 2016.

[2] X. Fang,R. Wu, and J.K.O. Sin, "Analytical modeling of ac resistance in thick coil integrated spiral inductors,"IEEE Transactions on Electron Devices,vol. 63, no. 2, pp. 760-766, February 2016.

[3]R. Wu, N. Liao, X. Fang, and J.K.O. Sin, “A silicon-embedded transformer for high-efficiency, high-isolation, low-frequency on-chip power transfer,”IEEE Transactions on Electron Devices, vol. 62, no. 1, pp. 220-223, January 2015.

[4] X.Fang,R. Wu, L. Peng, and J.K.O. Sin, “A novel integrated power inductor with vertical laminated core for improved L/R ratios,”IEEE Electron Device Letters, vol. 35, no. 12, pp. 1287-1289, December 2014.

[5]R. Wu, W. Li, H. Luo, J.K.O. Sin,and C.P. Yue, “Design and characterization of wireless power links for brain-machine interface applications,”IEEE Transactions on Power Electronics, vol. 29, no. 10, pp. 5462-5471, October 2014.

[6] L. Peng,R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “Optimization of monolithic 3D TSV transformers for high-voltage digital isolators,”ECS Journal of Solid State Science and Technology,vol. 3, no. 10, pp. Q207-Q211, August 2014.

[7] L. Peng,R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “A simple low cost monolithic transformer for high-voltage gate driver applications,”IEEE Electron Device Letters, vol. 35, no. 1, pp. 108-110, January 2014.

[8] S. Raju,R. Wu, M. Chan, and C.P. Yue, “Modeling of mutual coupling between planar inductors in wireless power applications,”IEEE Transactions on Power Electronics, vol. 29, no. 1, pp. 481-490, January 2014. (ESI工程學(xué)前1%高被引論文）

[9] L. Peng,R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “A fully integrated 3D TSV transformer for high-voltage signal transfer applications,”ECS Solid State Letters, vol. 2, no. 5, pp. Q29-Q31, February 2013.

[10] X.Fang,R. Wu, L. Peng, and J.K.O. Sin, “A novel silicon-embedded toroidal power inductor with magnetic core,”IEEE Electron Device Letters, vol. 34, no. 3, pp. 292-294, February 2013.

[11]R. Wu, J.K.O. Sin, and C.P. Yue, “High-Q backside siliconu2013embedded inductor for power applications in μH and MHz range,”IEEE Transactions on Electron Devices, vol. 60, no. 1, pp. 339-345, January 2013.

[12]R. Wu, S. Raju, M. Chan, J.K.O. Sin and C.P. Yue, “Silicon-embedded coil for high-efficiency wireless power transfer to implantable biomedical ICs,”IEEE Electron Device Letters, vol. 34, no. 1, pp. 9-11, January 2013.

[13]R. Wuand J.K.O. Sin, “High efficiency silicon-embedded coreless coupled inductors for power supply on chip applications,”IEEE Transactions on Power Electronics, vol. 27, no. 11, pp. 4781-4787, November 2012.

[14]R. Wu, J.K.O. Sin, and S.Y. (R.) Hui, “Novel silicon-embedded coreless transformer for on-chip isolated signal transfer,”IEEE Magnetics Letters, vol. 2, pp. 6500103, April 2011.

[15]R. Wuand J.K.O. Sin, “A novel silicon-embedded coreless inductor for high frequency power management applications,”IEEE Electron Device Letters, vol. 32, no.1, pp. 60-62, January 2011.

Conference Publications:

[1]R. Wu, N. Liao, X. Fang, and J.K.O. Sin, "A novel silicon-embedded transformer for system-in-package power isolation,"5th International Workshop on Power Supply on Chip(PwrSoC), Madrid, Spain, October 2016.

[2]R. Wu, J. Chen, N. Liao, and X. Fang, "On-chip transformers with shielding structures for high dV/dt immunity isolated gate drive,"8th IEEE Energy Conversion Congress & Exposition(ECCE),Milwaukee, USA, September 2016.

[3] S. Chen, Y. Li, andR. Wu, "Inductance to dc resistance ratio optimization of on-chip closed-core spiral power inductors,"12th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Hong Kong, China, August 2016.

[4]R. Wu, N. Liao, X. Fang, and J.K.O. Sin, "A novel 3D transformer for ultra-compact signal isolation,"27th IEEE International Symposium on Power Semiconductor Devices & ICu2019s(ISPSD), Hong Kong, China, May 2015, pp. 297-300.

[5] J. Zhou,R. Wu, J. Billoué and G. Gartier, “Backside silicon-embedded inductor using porous silicon layer for substrate effect suppression,”10th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Chengdu, China, June 2014.

[6] Y. Luo andR. Wu, “Specific absorption rate study for wireless power links in brain-machine interface applications,”10th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Chengdu, China, June 2014.

[7]R. Wu, W. Li, Y. Ren, H. Luo, and G. Zhang, “Backside silicon-embedded inductor using magnetic layer for shielding and inductance enhancement,”9th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Hong Kong, June 2013.

[8] L. Peng,R. Wu, X. Fang, Y. Toyoda, M. Akahane, M. Yamaji, H. Sumida, and J.K.O. Sin, “A novel 3D TSV transformer technology for digital isolator gate driver applications,”25th IEEE International Symposium on Power Semiconductor Devices & ICu2019s(ISPSD), Kanazawa, Japan, May 2013, pp. 69-72.

[9] S. Raju,R. Wu, M. Chan, and C.P. Yue, “Modeling of mutual inductance for planar inductors used in inductive link applications,”8th IEEE International Conference on Electron Devices and Solid State Circuits(EDSSC), Bangkok, Thailand, December 2012.

[10]R. Wu, X. Fang, L. Peng, and J.K.O. Sin, “Backside embedded inductors for PowerSoC applications,”3rd International Workshop on Power-Supply-on-Chip(PwrSoC), San Francisco, USA, November 2012.

[11] X. Fang,R. Wu, L. Peng, and J.K.O. Sin, “A new embedded inductor for ZVS dc-dc converter applications,”24th IEEE International Symposium on Power Semiconductor Devices & ICu2019s(ISPSD), Bruges, Belgium, June 2012, pp. 53-56.

[12]R. Wu, S. Raju, M. Chan, J.K.O. Sin and C.P. Yue, “Wireless power link design using silicon-embedded inductors for brain-machine interface,”2012 International Symposium on VLSI Design, Automation and Test(VLSI-DAT), Hsinchu, Taiwan, April 2012, pp.1-4.

[13]R. Wuand J.K.O. Sin, “Novel silicon-embedded coreless coupled inductors for high efficiency on-chip dc-dc conversion”,3rd IEEE Energy Conversion Congress & Exposition(ECCE), Phoenix, USA, September 2011, pp. 1827-1831.

[14]R. Wu, J.K.O. Sin, and S.Y. (R.) Hui, “A novel silicon-embedded coreless transformer for isolated dc-dc converter application”,23rd IEEE International Symposium on Power Semiconductor Devices & ICu2019s(ISPSD), San Diego, USA, May 2011, pp. 352-355.

[15]R. Wu, Y. Su, J.K.O. Sin, and S.Y. (R.) Hui, “Characterization of monolithic coreless transformers for power supply-on-chip applications”,1st International Workshop on Power-Supply-on-Chip(PwrSoC), Cork, Ireland, September 2008.

[16] Y. Onishi, H. Wang, H.P.E. Xu, W.T. Ng,R. Wuand J.K.O. Sin, “SJ-FINFET: a new low voltage lateral superjunction MOSFET”,20th IEEE International Symposium on Power Semiconductor Devices & ICu2019s(ISPSD), Orlando, USA, May 2008, pp.111-114.

[17] J. Zhang,R. Wu, M. Gao, J. Huang, Y. Wang, Z. Yu, Y. Ashizawa, and H. Oka, “Atomistic simulation of plasma enhanced chemical vapor deposited SiCOH dielectrics,”8th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Shanghai, China, October 2006, pp. 1447-1449.

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